Method of measuring overlay

ABSTRACT

In a method of measuring, in a lithographic manufacturing process using a lithographic projection apparatus, overlay between a resist layer, in which a mask pattern is to be imaged, and a substrate, use is made of an alignment-measuring device forming part of the apparatus and of specific overlay marks in the substrate and resist layer. These marks have periodic structures with periods which cannot be resolved by the alignment device, but generate an interference pattern having a period corresponding to the period of a reference mark of the alignment device.

RELATED APPLICATION

This application claims the benefit of priority to European PatentApplication No. 00204826.2, filed Dec. 27, 2000, the contents of whichare herein incorporated by reference.

The invention relates to a method of measuring, in a lithographicmanufacturing process using a lithographic projection apparatus, theoverlay between a resist layer, in which a mask pattern is to be imaged,and a substrate, in which method use is made of at least one substrateoverlay mark having a periodic structure with a period p₁ and acorresponding resist overlay mark having a periodic structure with aperiod p₂.

The invention also relates to a method of manufacturing devices by meansof a lithographic projection apparatus, which method comprises saidmethod of measuring overlay.

The lithographic projection apparatus is an essential tool in themanufacture of integrated circuits (ICs) by means of diffusion andmasking techniques. By means of this apparatus, a number of masks havingdifferent mask patterns are successively imaged at the same position ona semiconductor substrate.

A substrate is to be understood to mean a plate of material, for examplesilicon, into which a complete device, such as an IC is to be formedlevel-wise by means of a number of successive sets of processing steps.Each of these sets comprises as main processing steps: applying a resistlayer on the substrate, aligning the substrate with a mask, imaging thepattern of this mask in the resist layer, developing the resist layer,etching the substrate via the resist layer and further cleaning andother processing steps. The term substrate covers substrates atdifferent stages in the device-manufacturing process, i.e. both asubstrate having only one layer of device features and a substratehaving all but one layer of device features, and all intermediatesubstrates.

The substrate must undergo the desired physical and chemical changesbetween the successive projections of the different mask patterns. Tothis end, the substrate must be removed from the apparatus after it hasbeen exposed with a mask pattern. After it has undergone the desiredprocess steps, the substrate must again be placed at the same positionin the apparatus so as to expose it with a second mask pattern, and soforth. It must then be ensured that the images of the second maskpattern and the subsequent mask patterns are positioned accurately withrespect to device features already formed in the substrate. To this end,the lithographic projection apparatus is provided with an alignmentsystem with which alignment marks on the substrate are aligned withrespect to alignment marks on the mask. This alignment system comprisesan optical alignment-measuring device for measuring alignmentdeviations.

Here, alignment is understood to mean the process of ensuringmask-to-substrate registration when the wafer is in the projectionapparatus. Overlay is understood to mean the degree ofafter-the-exposure registration of a given level mask pattern and asubsequent level mask pattern. Alignment is carried out by means of maskalignment marks and substrate alignment marks. Alignment is a necessarystep in the manufacturing process of devices, like ICs, but does notguarantee sufficient overlay of a first level pattern and a second levelpattern formed in the substrate because of many error factors involved.Overlay accuracy mainly depends on the wafer stage accuracy, theaccuracy of the alignment-measuring device, the magnification errorinduced by substrate deformation and the pattern placement accuracy onthe mask. Higher overlay accuracy is required as the dimensions of thedevice features decrease. Accurate and reliable overlay measurement thusbecomes more and more important in order to correct overlay errors.

In a conventional overlay error correction procedure, after a firstsubstrate level has been provided with the required pattern, the patternfor a subsequent substrate level is imaged in a resist deposited on thesubstrate. The substrate is then removed from the projection apparatusand the resist is developed and the overlay between the developedpattern image and the pattern of the first substrate level is measuredin a stand-alone accuracy measuring system, usually a scanning electronmicroscope (SEM). The overlay error correction factors are calculatedand supplied to the projection apparatus, also called exposureapparatus, to correct the overlay. After the overlay error correctionhas been performed, all wafers of a batch are exposed.

For measuring overlay, conventionally a method known as the “KLA method”is accuracy used. In this method, overlay marks of the box-in-box typeare used. The overlay mark of the first level and that in the resistlayer have the same shape, usually a close contour such as a square, butthe dimensions of one mark are smaller than those of the other mark sothat the first mark fits within the other mark. Orientation of the marksrelative to each other and the distances between the correspondingcontour lines of the two marks is measured to determine the overlayaccuracy.

The article: “Submicrometer lithographic alignment and overlaystrategies” in: SPIE Vol. 1343 X-ray/EUV Optics for Astronomy,Microscopy, Polarimetry and Projection Lithography (1990), pages 245-255discloses that an optical Moiré technique may be used to measurealignment as well as overlay accuracy. The Moiré pattern is produced bytwo gratings having different periods or different orientations of theirgrating strips. One experiment for superposing these gratings andobserving their effect when illuminating them is described. The twogratings are imaged one after the other in the same resist layer withoutdeveloping the resist between the exposures. As to the overlaymeasurement, it is only remarked that the multiplication of the shiftbetween the small period gratings provided by the generated Moiréfringes having a larger period results in a powerful technique formeasuring overlay between the two gratings. In addition thereto, it isremarked that the phase of the difference fringe pattern, i.e. the Moirépattern, relative to an external reference such as the edge of thegrating mark gives a direct measurement of the overlay, withoutexplaining how such a comparison should be implemented.

It is an object of the invention to provide a method of measuringoverlay, which does not need a stand-alone measuring system and makesefficient use of the potentials of a lithographic projection apparatus.This method is characterized in that use is made of analignment-measuring device, forming part of the apparatus and intendedfor measuring the alignment of a substrate alignment mark having aperiodic structure with a period p_(s) which is substantially largerthan the period p₁ and p₂, with respect to a reference mark having aperiodic structure with a period p_(r), adapted to the period p_(s), andin that an interference pattern, which is generated upon illumination ofthe substrate overlay mark and the resist overlay mark and has a periodp_(b), adapted to the period p_(r), is imaged on said reference mark bymeans of alignment beam radiation.

The novel method includes a new use of an existing alignment measuringsystem for measuring the overlay between two small period gratingshaving slightly different grating periods.

The periods p₁ and p₂ of the substrate overlay mark and the resistoverlay mark, respectively, are preferably of the order of the resolvingpower of the projection system. Because of the small periods, smalloverlay errors can be measured with the new method. The period of theinterference pattern, or Moiré pattern, is determined by the periods ofthe substrate alignment mark and, the resist alignment mark. By properchoice of the periods p₁and p₂, the period of the interference patterncan be made equal to the period of a conventional substrate alignmentmark so that the method can be carried out with a conventional alignmentdevice. The actual overlay errors are magnified by the new method and asmall overlay error results in a considerably larger displacement of theinterference pattern with respect to the reference alignment mark and ina considerable change in the overlay signal from the alignment unit.This means that less interpolation of the detector signal is needed sothat a considerably more accurate measurement becomes possible. As theoverlay error signal provided by the new method is an averaged signalover a relatively large area, this signal is less sensitive to localsurface deformations.

It should be noted that the article: “Overlay Accuracy MeasurementTechnique Using the Latent Image on a Chemically Amplified Resist” in:Jpn. J. Appl. Phys. Vol. 35 (1996) pp. 55-60 discloses that thealignment sensor included in the exposure apparatus may be used tomeasure overlay accuracy, so as not to reduce the throughput of theapparatus. However, only one overlay grating mark is used. Two laserbeams are projected on this mark and interfere with each other, therebyproducing a beat signal. The phase of this beat signal, informationabout the displacement of the overlay mark, is detected by comparing thephase shift with the phase of a reference beat signal.

The alignment-measuring device used for measuring the overlay may be aso-called on-axis device wherein a substrate alignment mark is directlyimaged on a mask alignment mark via the projection system, for example aprojection lens system, of the apparatus. This device is also known asthe through-the-lens (TTL) alignment device. The alignment device mayalso be an off-axis device. In this device, a substrate alignment markis imaged on a reference alignment mark arranged outside the field ofthe projection system of the apparatus. In a very promising embodimentof the off-axis device, a substrate alignment mark is aligned withrespect to an alignment mark on the substrate holder via a referencemark which is arranged outside the projection column. During this firstalignment step, the substrate holder with the substrate is positionedoutside the projection column. After the first alignment step has beenperformed, the substrate holder is positioned in the projection column,and in a second alignment step the substrate alignment mark is imaged ona mask alignment mask via the projection lens.

A lithographic projection apparatus may not only be used for themanufacture of ICs but also for the manufacture of other structureshaving structure details of the order of 1 μm and smaller. Examples arestructures of integrated, or planar, optical systems, guiding anddetection patterns of magnetic domain memories, structures of liquidcrystal display panels and magnetic heads. Also in the manufacture ofthese structures, images of mask patterns must be aligned veryaccurately with respect to a substrate.

The lithographic projection apparatus may be a stepping apparatus or astep-and-scan apparatus. In a stepping apparatus, the mask pattern isimaged in one run on an IC area of the substrate. Subsequently, thesubstrate is moved with respect to the mask in such a way that asubsequent IC area will be positioned under the mask pattern and theprojection lens system and the mask pattern is imaged on the subsequentIC area. This process is repeated until all IC areas of the substrateare provided with a mask pattern image. In a step-and-scan apparatus,the above-mentioned stepping procedure is also followed, but the maskpattern is not imaged in one run but via scanning movement. Duringimaging of the mask pattern, the substrate is moved synchronously withthe mask with respect to the projection system and the projection beam,taking the magnification of the projection system into account. A seriesof juxtaposed partial images of consecutively exposed parts of the maskpattern is imaged in an IC area. After the mask pattern has beencompletely imaged in an IC area, a step is made to a subsequent IC area.A possible scanning procedure is described in the article: “Sub-micron1:1 Optical Lithography” by D. A. Markle in the magazine “SemiconductorsInternational” of May 1986, pp. 137-142.

U.S. Pat. No. 4,251,160 discloses an optical lithographic projectionapparatus intended for the manufacture of ICs and provided with a singleon-axis alignment unit. The substrate and mask alignment marks aregratings. A double on-axis alignment unit for aligning a first and asecond substrate alignment mark with respect to a first and a secondmask alignment mark, respectively, is disclosed in U.S. Pat. No.4,778,275. Patent Application WO 98/39689 discloses an off-axisalignment unit and U.S. Pat. No. 5,243,195 discloses an alignment systemcomprising both an on-axis alignment unit and an off-axis alignmentunit.

For determining the overlay error from the position of the image of theinterference pattern with respect to the reference alignment mark, afurther reference mark is needed. An embodiment of the measuring method,wherein such a further reference mark is used, is characterized in thatuse is made of a substrate reference, mark having substantially the sameperiod as the interference pattern, the substrate reference mark isimaged on the reference mark and the difference between the positions ofthe image of the interference pattern and that of the substratereference mark with respect to the reference alignment mark isdetermined.

Said difference between the positions is a measure of the shift betweenthe substrate overlay mark and the resist overlay mark. The substratereference mark may be constituted by a global alignment mark.

A global alignment mark is understood to mean an alignment mark having aperiodic structure for aligning a substrate as such with respect to areference alignment mark such as a mask alignment mark. The period ofthe global alignment mark is substantially larger than the resolutionlimit of the projection system by means of which the global substratealignment mark is imaged on the wafer alignment mark, which inprinciple, is a global alignment mark.

The alignment marks used with the measuring method may have differentstructures, provided that they are periodic. The so-called Siemens staris such a periodic alignment mark that is already used in the opticallithography technique.

Preferably, the method is characterized in that, use is made of gratingsfor the substrate overlay mark, and the resist overlay mark and thereference mark.

Grating structures have proved to be very suitable as alignment marks.

The resist overlay mark is formed in the resist layer by imaging acorresponding mark provided on the mask outside the mask pattern in theresist layer by means of the lithographic apparatus. The area of thesubstrate layer where the mark image is located may be developed and thedeveloped mark image may be used for carrying out the measuring method.

Preferably, the method is characterized in that the resist overlay markis a latent mark.

A latent mark is understood to mean a latent, or non-developed, image ofa mask mark. A resist layer with such a latent image comprises areas,which are linear areas in the case of a grating mark, which have adifference phase effect on an incident beam than their surroundings.These effects are due to the intensity variations in the beam thatimages the mark, which variations cause local changes of the refractiveindex in the layer and local shrinkage of this layer. Due to these phaseeffects, the latent overlay mark is discernible by the alignment beam.The advantage of using a latent overlay mark is that the substrate withthe mark image in the resist layer does not need to be removed from thelithographic apparatus for developing this image.

The invention may be implemented in different ways resulting indifferent embodiments of the measuring method.

A first embodiment is characterized in that an on-axis alignment deviceis used and in that the reference mark is a mask alignment mark.

In this embodiment, the interference pattern is imaged on a maskalignment mark by means of the projection system that is intended forprojecting mask patterns onto the substrate.

This embodiment is preferably further characterized in that theinterference pattern is imaged on a mask alignment mark via an opticalfilter, which selects diffraction orders of the radiation from theoverlay marks to proceed to said mask alignment mark.

This optical filter, or diaphragm, prevents noise radiation, caused forexample by false reflection at components in the apparatus, fromreaching the detector. By selecting, for example, only the firstdiffraction orders for imaging the interference pattern on the maskalignment mark, the accuracy of the overlay measurement can be increasedby a factor of two.

A second embodiment of the method is characterized in that an off-axisalignment device is used.

The interference pattern is imaged on a reference alignment mark formingpart of an off-axis alignment device that is located next to theprojection lens. With this device, a number of diffraction orders of thealignment radiation from the substrate, for example the first to theseventh order, can be detected separately. The mask is also aligned withrespect to the off-axis alignment device, so that the substrate and themask are aligned in an indirect, or two-step, way. An advantage of theuse of an off-axis alignment method is that it is largely insensitive toCMP process parameters.

This invention also relates to a method of manufacturing devices in atleast one layer of substrates, which method comprises at least one setof the following successive steps:

aligning a mask provided with at least one overlay mark with respect toa first substrate;

imaging, by means of projection radiation, the overlay mark in a resistlayer on the substrate;

determining the overlay between the overlay mark formed in the resistlayer and an overlay mark in the substrate and correcting overlayerrors;

imaging, by means of projection radiation a mask pattern comprisingpattern features corresponding to device features to be configured insaid layer in a resist layer on each substrate wherein the devicefeatures are to be formed, and

removing material from, or adding material to, areas of said layer,which areas are delineated by the mask pattern image. This method ischaracterized in that the overlay is determined by means of the methodas described herein before.

These and other aspects of the invention are apparent from and will beelucidated, by way of non-limitative example, with reference to theembodiments described hereinafter.

In the drawings:

FIG. 1 shows an embodiment of a lithographic projection apparatus forrepetitively imaging a mask pattern on a substrate;

FIG. 2 shows an embodiment of a global substrate alignment mark;

FIG. 3 shows an embodiment of a double alignment-measuring device bymeans of which the novel overlay measuring method can be performed;

FIG. 4 shows an embodiment of a substrate overlay mark and a resistoverlay mark;

FIG. 5 is an enlarged cross-section of these marks;

FIG. 6 shows an order filter of the on-axis alignment measuring deviceand first-order sub-beams generated by the overlay marks, and

FIG. 7 shows an embodiment of an off-axis alignment-measuring device bymeans of which the novel overlay measuring method can be performed.

FIG. 1 shows the principle and an embodiment of a lithographicprojection apparatus for repetitively imaging a mask pattern on asubstrate. The main components of this apparatus are a projectioncolumn, in which a mask MA provided with a mask pattern C to be imagedis arranged, and a movable substrate table WT, by means of which thesubstrate W can be positioned with respect to the mask pattern. Theapparatus further comprises an illumination unit, which consists of aradiation source LA, for example a Krypton-Fluoride laser, a lens systemLS, a reflector RE and a condenser lens CO. The projection beam PBsupplied by the illumination unit illuminates the mask pattern C presentin the mask MA which is arranged on a mask holder (not shown) in themask table MT.

The projection beam PB passing through the mask pattern C traverses aprojection lens system PL arranged in the projection column and shownonly diagrammatically. The projection system successively forms an imageof the pattern C in each of the IC areas, or substrate fields, of thesubstrate W. The projection lens system has, for example a magnificationM of ¼, a numerical aperture of the order of 0.5, or larger, and adiffraction-limited image field with a diameter of the order of 0.25.These numbers are arbitrary and may vary with every new generation ofthe projection apparatus. The substrate W is arranged in a substrateholder (not shown) which forms part of a substrate table WT supportedin, for example, air bearings. The projection lens system PL and thesubstrate table WT are arranged in a housing HO which is closed at itslower side by a base plate BP of, for example granite, and at its upperside by the mask table MT.

As is shown in the top right-hand corner of FIG. 1, the mask has twoalignment marks M₁ and M₂. These marks preferably consist of diffractiongratings, but they may be alternatively formed by other periodicstructures. The alignment marks are preferably two-dimensional, i.e.they extend in two mutually perpendicular directions, the X and Ydirections in FIG. 1. The substrate W, for example a semiconductorsubstrate or wafer, comprises a plurality of alignment marks, preferablyalso two-dimensional diffraction gratings, two of which P₁ and P₂, areshown in FIG. 1. The marks P₁ and P₂ are located outside the substratefields where the images of the mask pattern must be formed. Thesubstrate alignment marks P₁ and P₂ are preferably formed as phasegratings and the mask alignment marks M₁ and M₂ are preferably formed asamplitude gratings.

FIG. 2 shows one of the two identical substrate phase gratings on alarger scale. Such a grating may comprise four sub-gratings P_(1,a),P_(1,b), P_(1,c), and P_(1,d), two of which, P_(1,b) and P_(1,d), areused for measuring alignment in the X direction and the two othersub-gratings, P_(1,a) and P_(1,c) are used for measuring alignment inthe Y direction. The two sub-gratings P_(1,b) and P_(1,c) have a gratingperiod of, for example, 16 μm and the sub-gratings P_(1,a) and P_(1,d)have a grating period of, for example, 17.6 μm. Each sub-grating maycover a surface area of, for example, 200×200 μm². An alignment accuracywhich, in principle, is less 0.1 μm can be achieved with these gratingmarks and a suitable optical system. Different grating periods for thesub-gratings have been chosen so as to increases the capture range ofthe alignment-measuring device.

FIG. 1 shows a first embodiment of an alignment-measuring device, namelya double alignment-measuring device. In this device, two alignment beamsb and b′ are used for measuring the alignment of the substrate alignmentmark P₂ with respect to the mask alignment mark M₂, and the substratealignment mark P₁ with respect to the mask alignment mark M₁,respectively. The alignment-measuring beam b is reflected to thereflective surface 27 of a prism 26 by means of a reflective element 30,for example, a mirror. The surface 27 reflects the beam b to thesubstrate alignment mark P₂ which sends a part of the radiation as beamb₁ to the associated mask alignment mark M₂ where an image of the markP₂ is formed. A reflecting element 11, for example a prism, whichdirects the radiation passed by the mark M₂ to a radiation-sensitivedetector 13 is arranged above the mark M₂.

The second alignment measuring beam b′ is reflected to a reflector 29 inthe projection lens system PL by a mirror 31. This reflector sends thebeam b′ to a second reflecting surface 28 of the prism 26, which surfacedirects the beam b′ onto the substrate alignment mark P₁. This markreflects a part of the radiation of the beam b′ as a beam b₁′ to themask alignment mark M₁ where an image of the mark P₁ is formed. Theradiation of the beam b₁′ passing through the mark M₁ is directedtowards a radiation-sensitive detector 13′ by a reflector 11′. Theoperation of the double alignment-measuring device will be furtherdescribed with reference to FIG. 3 showing a further embodiment of sucha device.

The projection apparatus further comprises a focus-error detectionsystem for determining a deviation between the image plane of theprojection lens system PL and the surface of the substrate W. A measureddeviation can be corrected, for example, by moving the projection lenssystem with respect to the substrate holder along the optical axis ofthe projection lens system. The focus error detection system may beconstituted by the elements 40 to 46, which are arranged in a holder(not shown) which is fixedly connected to the holder of the projectionlens system. Element 40 is a radiation source, for example a diodelaser, emitting a focus-detection beam b₃. This beam is directed to thesubstrate W at a small angle by a reflecting prism 42. Thefocus-detection beam reflected by the substrate is directed to aretroreflector 44 by a prism 43. The retroreflector reflects the beam initself, so that the focus detection beam once more transverses the samepath, now as beam b₃′, via reflection on the prism 43 to the substrateand from this substrate to the prism 42. The reflected focus-detectionbeam then reaches a beam splitter 41, which reflects the beam to afurther reflector 45. This reflector sends the focus-detection beam to aradiation-sensitive detection system 46. This detection system consistsof, for example a position-sensitive detector or of two separatedetectors. The position of the radiation spot formed by the beam b₃′ onthe detection system is dependent on the extent to which the image planeof the projection lens system coincides with the surface of thesubstrate W. For an extensive description of the focus error detectionsystem, reference is made to U.S. Pat. No. 4,356,392.

Instead of this focus detection system with a monochromaticfocus-detection beam, a focus-and-tilt detection system with a broadbandbeam is preferably used. Such a broadband focus-detection system isdescribed in U.S. Pat. No. 5,191,200.

In order to determine the X and Y positions of the substrate veryaccurately, the apparatus comprises a composite interferometer systemhaving a plurality of measuring axes, of which only a one-axissub-system is shown in FIG. 1. This sub-system comprises a radiationsource 50, for example a laser, a beam splitter 51, a stationaryreference mirror 52 and a radiation-sensitive detector 53. The beam b₄emitted by the source 50 is split by the beam splitter into a measuringbeam b_(4,m) and b_(4,r). The measuring beam reaches the measuringmirror in the form of a reflective surface of the substrate table, orpreferably a reflective side surface of the substrate holder which formspart of the substrate table and on which the substrate is rigidlysecured. The measuring beam reflected by the measuring mirror iscombined by the beam splitter 51 with the reference beam reflected bythe reference mirror 52 so as to form an interference pattern at thelocation of the detector 53. The composite interferometer system may beimplemented as described in U.S. Pat. No. 4,251,160 and then comprisestwo measuring axes. The interferometer system may alternatively comprisethree measuring axes as described in U.S. Pat. No. 4,737,823, but ispreferably a system with at least five measuring axes as described inEP-A 0 498 499.

By making use of a substrate position detection system in the form of acomposite interferometer system, the positions of, and the mutualdistances between, the alignment marks P₁ and P₂ and the marks M₁ and M₂can, be fixed during alignment in a system of co-ordinates defined bythe interferometer system. Thus it is not necessary to refer to a frameof the projection apparatus or to a component of this frame, so thatvariations in this frame due to, for example temperature variations,mechanical creep and the like do not affect the measurements.

FIG. 3 shows the principle of the double alignment system with referenceto an embodiment which is distinguished from that of FIG. 1 by adifferent manner of coupling the alignment beams b and b′ into theprojection lens system. The double alignment device comprises twoseparate and identical alignment systems AS₁ and AS₂ which arepositioned symmetrically with respect to the optical axis AA′ of theprojection lens system PL. The alignment system AS₁ is associated withthe mask alignment mark M₂ and the alignment system AS₂ is associatedwith the mask alignment mark M₁. The corresponding elements of the twoalignment systems are denoted by the same reference numerals, those ofthe elements of the system AS₂ being distinguished by their primednotation.

The structure of the system AS₁ as well as the way in which the mutualposition of the mask alignment mark M₂ and, for example, the substratealignment mark P₂ is determined will now be described first.

The alignment system AS₁ comprises a radiation source 1, which emits analignment beam b. This beam is reflected towards the substrate by a beamsplitter 2. The beam splitter may be a partially transparent reflectoror a partially transparent prism, but is preferably apolarization-sensitive splitting prism, which is succeeded by aquarter-wavelength plate 3. The projection lens system PL focuses thealignment beam b to a small radiation spot V having a diameter of theorder of 1 mm on the substrate W. This substrate reflects a part of thealignment beam as beam b₁ in the direction of the mask MA. The beam b₁traverses the projection lens system PL, which system images theradiation spot on the mask. Before the substrate is arranged in theprojection column, it has been pre-aligned in a pre-alignment station,for example the station described in U.S. Pat. No. 5,026,166, so thatthe radiation spot V is located on the substrate alignment mark P₂. Thismark is then imaged by the beam b₁ on the mask alignment mark M₂. Thedimensions of the mask alignment mark M₂ are adapted to those of thesubstrate alignment mark P₂, taking the magnification M of theprojection lens system into account. The image of the mark P₂ thenaccurately coincides with the mark M₂ if the two marks are mutuallypositioned in the correct manner.

On their paths to and from the substrate W, the alignment measuringbeams b and b₁ have traversed twice the quarter-wavelength plate 3 whoseoptical axis extends at an angle of 45° to the direction of polarizationof the linearly polarized beam coming from the source 1. The beampassing through the plate 3 then has a direction of polarization that isrotated 90° with respect to that of the beam b, so that the beam b₁ ispassed by the polarization-sensitive prism 2. The use of thepolarization-sensitive prism in combination with the quarter-wavelengthplate provides the advantage of a minimum radiation loss when couplingthe alignment-measuring beam into the radiation path of the alignmentsystem.

The beam b₁ passed by the alignment mark M₂ is reflected by a prism 11and directed, for example, by a further reflecting prism 12 towards aradiation-sensitive detector 13. This detector is, for example, acomposite photodiode having, for example, four separateradiation-sensitive areas in conformity with the number of sub-gratingsaccording to FIG. 2. The output signals of the sub-detectors compriseinformation about the extent to which the mark M₂ coincides with theimage of the mark P₂. These signals may be processed electronically andused for moving the mask with respect to the substrate by means ofdriving systems (not shown) so that the image of the substrate alignmentmark P₂ coincides with the mask alignment mark M₂.

A beam splitter 14 splitting a part of the beam b₁ into beam b₂ may bearranged between the prism 11 and the detector 13. The split-off beam isthen incident via, for example, two lenses 15 and 16 on a televisioncamera, which is coupled to a monitor (not shown) on which the alignmentmarks P₂ and M₂ are visible to an operator of the lithographicapparatus.

Analogously as described above for the alignment marks P₂ and M₂, themarks M₁ and P₁ and M₁ and P₂, respectively, can be aligned with respectto each other. The alignment-measuring system AS₂ is used for thelast-mentioned alignments.

Preferably, a so-called order diaphragm is arranged in the path of thealignment radiation between the substrate and the mask. This diaphragm,denoted by the reference numeral 25 in FIG. 3, passes only the radiationrequired for the measuring operation and blocks other radiation, forexample from false reflection at components in the system, so that thesignal-to-noise ratio of the detector signal is improved. The alignmentmarks P₁ and P₂, in the form of gratings or other diffraction element,split the alignment-measuring beams incident thereon in a non-deflectedzero-order sub-beam and a plurality of, deflected, first-order andhigher-order sub-beams. Of these sub-beams, only those having the samediffraction order are selected by the order diaphragm. This diaphragm isarranged in the projection lens system at a position where the sub-beamsdiffracted in the different diffraction orders are spatially separatedto a sufficient extent, for example, in the Fourier plane of theprojection system. The order diaphragm 25 consists of a plate, which isnon-transmissive to the alignment-measuring radiation and has aplurality of radiation-transmissive apertures or areas. If the alignmentmarks have a two-dimensional structure, the plate has four apertures:two for the sub-beams diffracted in the relevant order in the plus andminus X directions and two for the sub-beams diffracted in the relevantorder in the plus and minus Y directions. Moreover, an additional orderdiaphragm improving the selection of the desired order is preferablyarranged in the detection branch, i.e. the part of the radiation pathfrom the mask alignment mark to the detector 13, 13′. The sub-beamsdiffracted in the first orders are preferably used for the alignmentmeasurement. When using only the first orders for image the substratemark on the mask mark, the period of the image of the substrate mark ishalf that of the substrate grating itself, when neglecting themagnification of the projection lens system. As a result, the accuracywith which the gratings are aligned for a specific period of the gratingP₂ is twice as high as in the case where the zero-order sub-beam wasalso used.

According to the invention, the alignment-measuring system of FIGS. 1and 3, or other similar systems, is used for detecting overlay of apattern previously formed in the substrate and a pattern imaged in aresist layer provided on the substrate. The substrate pattern and theresist pattern used for the overlay measurement are specific overlaymarks having a periodic structure with a period which is considerablysmaller than that of substrate alignment marks used up to now. FIG. 4.shows a cross-section of a small part of the substrate W comprising asubstrate overlay mark P₁₀ and a resist layer RL on top of the substratecomprising a resist overlay mark P₁₁. The substrate overlay mark and theresist overlay mark have grating periods PE₁₀ and PE₁₁, respectively,which are preferably of the order of the resolving power, or resolution,of the projection lens system. These grating periods are slightlydifferent, as is illustrated in FIG. 5.

The upper part of FIG. 5 shows a part of the overlay marks a incross-section and on a very large scale. These overlay marks may beconstituted by phase structures, for example phase gratings. The gratingperiod PE₁₀ of the substrate overlay mark is larger than this period P₁₁of the resist overlay mark, or the other way round. When illuminatingthese overlay marks by a radiation beam, such as the beam of thealignment-measuring device, the phase effects of these marks on the beaminterfere so that an interference phase pattern, or phase image isgenerated. This phase pattern, which may also be called a beat patternor beat grating, has a beat period PE_(b) which is given by:1/PE _(b)=1/PE ₁₀−1/PE ₁₁.The graph 60 in the lower part of FIG. 5 shows the variation of theaverage phase depth APD of the phase pattern along the x direction, i.e.perpendicular to the grating strips of the fine substrate-grating andthe resist overlay grating. The phase variation or the position of themaxima and minima of the beat pattern is determined by the mutualposition of the overlay gratings. In order to measure this mutualposition or the mutual shift in the X direction of the overlay gratings,the beat phase pattern is imaged on an on-axis or off-axis measuringgrating, or measuring mark, arranged in front of a radiation-sensitivedetector. If, for this imaging, an optical system is used which canresolve the coarse beat pattern with the period PE_(b), but not the fineoverlay marks with the periods PE₁₀ and PE₁₁, only the sine-likevariation of the phase pattern, i.e. the position of the beat patternwill be detected. In order to determine the mutual shift of the overlaymarks from the position of the beat pattern, the latter position withrespect to the measuring mark can be compared with the position of asubstrate reference mark with respect to the same measuring mark. Thesubstrate reference mark may be constituted by a global alignment markarranged in the substrate in the neighborhood of the fine alignmentmark. The measuring mark is a global mask alignment mark if an on-axisalignment-measuring device is used. The mutual position of the overlaymarks can be determined in a simple way from the mutual position of thesubstrate reference mark and the beat pattern. A mutual shift of theoverlay marks over PE₁₁/2 results in a shift of the beat pattern overP_(b)/2.

A small shift of the overlay marks is thus translated into aconsiderably larger shift of the beat pattern, i.e. this shift ismagnified. The magnification factor M_(f) is given by:M _(f)=shift_(beat)/shift_(overlay marks) =PE ₁₀/(PE ₁₁ −PE ₁₀)Because of the magnification, less interpolation of the detector signalis needed in the overlay signal processing so that the measurement ismore accurate. The magnification also decreases the sensitivity of theoverlay method to artifacts such as PICO, RICO and WICO. These artifactsare offsets in the overlay signal caused by the large coherence lengthof the measuring laser beam, for example a He—Ne laser beam. Because ofthe large coherence length, laser radiation which has been affected byoptical components in the system may interfere with the desired signalradiation, i.e. radiation of the plus one and minus order in thedescribed embodiment. The resulting artifacts may be induced by thepolarization effects of the mask or reticle (polarization-inducedcoherence offset: PICO), by the thickness of the reticle (reticleinduced coherence offset: RICO) or by the Z-position of the substrate orwafer (wafer-induced coherence offset: WICO). Due to the magnification,the measurement of the position of the beat pattern is not verycritical. If an error A is made in the determination of the beat patternposition, this will result in a much smaller error of (1/M_(f)). Δ inthe determination of the overlay. The magnification factor may be of theorder of 10 or 20.

Since the measuring signal is an averaged signal taken from a relativelylarge substrate surface area, this signal is less sensitive to localsurface deformations.

The beat period PE_(b) may be chosen to be such that it fits that of aglobal mask alignment mark, i.e. an on-axis alignment mark, so that theoverlay measuring method may be implemented with the on-axis alignmentdevice of FIG. 3. After the choice for the beat period has been made,there is still the freedom to choose the feature dimensions of theoverlay marks, i.e. in the case of grating marks, the periods of thesegratings. It is thus possible to optimize the overlay marks for minimumsensitivity to process-induced deformations. In the case of gratingmarks, this means, for example, that the grating period may be of theorder of the dimensions of the IC device features, which are to beprojected on the substrate by the lithographic apparatus. It is expectedthat grating marks with such small periods are less vulnerable to saidprocess-induced deformations.

The substrate overlay mark may be a phase mark and/or an amplitude mark.In the case of a phase mark, this mark is etched in a layer of thesubstrate. The resist overlay mark is preferably a phase mark. This markmay be constituted by a mark in a developed resist layer. The phasedepth of such a mark is determined by the difference in refractive indexof the resist and that of the surrounding medium, usually air, and thethickness of the resist. Since this difference in refractive index isfairly large, there is a strong relationship between the resistthickness and the signal strength of the alignment signal. The resistoverlay mark may also be a so-called latent mark, i.e. an image of afine alignment mark in a resist that has not been developed. Such animage comprises first areas upon which projection beam radiation hasbeen incident and second areas for which this is not the case. Thesefirst and second areas provide different optical path lengths for thealignment-determining beam passing through them. This difference is dueto either chemical changes in the first areas, which changes cause achange in the refractive index in these areas or to material shrinkagein these areas resulting in a height difference between the first andsecond areas. These effects are modest, and for the usual resistthickness, no oscillatory change of the alignment signal with resistthickness will occur. Using a latent overlay mark provides the advantagethat the substrate with the resist layer does not need to be removedfrom the lithographic apparatus for development of the resist.

In the same way as for the alignment-measuring method, the newoverlay-measuring method can be improved by using a spatial, ordiffraction order, filter, or diaphragm. This filter transmits, forexample, only the first orders sub-beams from the beat pattern. Thisfilter may be similar to the filter 25 of FIG. 3. The sensitivity of theover-lay measuring method to noise and other disturbances, which mayoccur in the alignment-measuring device, can be considerably reduced bysuch a filter. The advantage of using only the first order sub-beams forimaging the beat pattern on a mask grating is that the period of thepattern image is half that of the pattern itself, irrespective of themagnification of the projection lens system. As a result, the alignmentaccuracy is twice as high as in the case the zero order sub-beam wasalso used for imaging.

FIG. 6 illustrates diagrammatically the method wherein an order filter25′ is used. In this Figure, b is the overlay measuring beam and 75 is areflector which couples the beam b into the projection column comprisingthe projection lens system, not shown, of the lithographic apparatus.The optical axis of the projection lens system coincides with thevertical part of the path of the beam b. The substrate overlay mark andthe resist overlay mark and the beat pattern generated by them areschematically represented by the grating structure P_(c), which is acomposite structure. The sub-beams b_(Pb)(+1) and b_(Pb)(−1) are theoverlay beam portions which are diffracted by the grating structure inthe plus first diffraction order and the minus first diffraction order,respectively. These sub-beams pass through the openings in the spatial,or order, filter to a mask alignment mark and a detector. The sub-beamsof other diffraction orders are blocked by the filter and thus cannotreach the detector.

FIG. 6 also shows, for illustrative purposes, the sub-beams b_(P10)(+1)and b_(P10)(−1), which would be diffracted in the plus and minus firstorders by the fine substrate overlay grating P₁₀ alone, as well as thesub-beams b_(P11)(+1) and b_(P11)(−1) which would be diffracted in theplus and minus first orders by the fine resist overlay grating P₁₁alone. Due to the small periods of these fine gratings, the diffractionangles are so large that these sub-beams do not even enter theprojection lens system. This means that the alignment device images onlythe beat pattern rather than an individual fine overlay mark.

The new method may also be used for two-dimensional alignment, i.e.alignment in both the X direction and the Y direction. The substratefine alignment mark and the additional alignment mark should thencomprise both grating strips extending in the Y direction and gratingstrips extending in the X direction, in a similar way as shown in FIG. 2for the global alignment mark.

Instead of using the on-axis alignment-measuring device shown in FIGS. 1and 3, other on-axis alignment-measuring devices may also be used toperform the overlay-measuring method.

The projection system, which is used, inter alia, for imaging the beatpattern on the mask alignment mark may not be a lens projection systembut a mirror system or a system comprising lenses and mirrors. A mirrorprojection system will be used in an apparatus, such as an EUVapparatus, wherein the projection beam has such a small wavelength thatno suitable lens material is available.

The new method may also be implemented with an off-axis alignmentmeasuring device, for example a device by means of which the alignmentof a substrate mark relative to a reference is determined and whereinhigher order sub-beams, i.e. sub-beams having a diffraction order whichis higher than 1, are used. Since the overlay measuring no longer takesplace through the projection system, there will be a greater freedom touse more sub-beams, particularly higher order sub-beams. Since, ingeneral, the resolving power of the alignment-measuring device increaseswith an increasing order number of the sub-beams, the accuracy of theoverlay measuring can be enhanced considerably. Moreover, it is alsopossible to use overlay-measuring radiation with more than onewavelength, so that the requirements imposed on the depth of the gratinggrooves can be alleviated considerably.

FIG. 7 is the circuit diagram of an off-axis alignment-measuring device.In this Figure, the composite substrate grating structure, including thebeat pattern, is denoted by P₁. A parallel overlay-measuring beam bhaving a wavelength λ incident on this structure is split up into anumber of sub-beams extending at different angles α_(n) (not shown) tothe normal on the grating, which angles are defined by the known gratingformula:sin α_(n) =N·λ/Pwherein N is the diffraction order number and P the grating period. Thepath of the sub-beams reflected by the composite grating structureincorporates a lens system L1, which converts the different directionsof the sub-beams into different positions un of these sub-beams in aplane 78:un=f 1 ·α_(n)In the plane 78, means may be provided for further separating thedifferent sub-beams. To this end, a plate may be arranged in this plane,which is provided with deflection elements in the form of, for examplewedges 81-86. In FIG. 7, the wedge plate is denoted by WEP. The wedgesare provided on, for example the rear side 80 of the plate. A prism 77can then be provided on the front side of the plate, with which theoverlay-measuring beam coming from the rad source 76, for example aHe—Ne laser, can be coupled into the overlay-measuring device. Thisprism can also prevent the 0-order sub-beam from reaching the detectors.The number of wedges corresponds to the number of sub-beams to be used.In the embodiment shown, there are six wedges per measuring directionfor the plus orders so that the sub-beams up to and including the7-order can be used for overlay-measuring. All wedges have a differentwedge angle so that an optimal separation of the sub-beams is obtained.

A second lens system L₂ is arranged behind the wedge plate. This lenssystem images the pattern Pc in a plane reference plate RGP. In theabsence of the wedge plate, all sub-beams would be superimposed on thereference plate. Since the different sub-beams are deflected atdifferent angles by the wedge plate, the images formed by the sub-beamsare situated at different positions on the reference plate. Thesepositions x_(n) are given by:x _(n) =f ₂·γ_(n)wherein γ is the angle at which a sub-beam is deflected by the wedgeplate and f₂ is the focal length of the lens system L₂. Referencegratings G₉₀-G₉₆ (not shown) can be provided at these positions, behindeach of which a separate detector 90 to 96 is arranged. The outputsignal of each detector is dependent on the extent to which the image ofthe pattern Pc coincides with the relevant reference grating. Hence, theextent of overlay can be measured with each detector 90 to 96. However,the accuracy with which the measurement takes place is dependent on theorder number of the sub-beam used; as this order number is larger, theaccuracy is greater. The grating period of each reference grating isadapted to the order number of the associated sub-beam. As the ordernumber is larger, the grating period is smaller and a smaller alignmenterror can be detected.

Hitherto, only one set of diffraction orders has been considered.However in addition to +1, +2, +3 etc. order sub-beams, the diffractionstructure Pc also forms, sub-beams of diffraction orders −1, −2, −3 etc.Both the plus-order and minus-order sub-beams can be used to form thepattern image, i.e. a first image of the pattern is formed by the +1 and−1 order jointly, a second image is formed by the +2 and −2 ordersub-beams jointly, and so forth. For the +1 order and the −1 ordersub-beams, no wedges need to be used, but plane-parallel plates whichcompensate for path-length differences can be provided at the positionsof these sub-beams in the plane of the wedge plate. Thus, six wedges,both for the plus orders and for the minus orders, are required for theorders 2 to 7. Also for overlay measuring in the Y direction, sevensub-beams may be used together with seven further reference gratings. Asecond series of twelve wedges is then arranged on the wedge plate inthe Y direction in the embodiment of FIG. 7.

For further details and embodiments of the off-axis alignment devicewherein different diffraction orders may be used, reference is made toWO 98/39689. This publication also describes under which circumstancesthe different diffraction orders are used, and that alignment radiationhaving two wavelengths may be used in the off-axis alignment device. Thelatter provides the advantage that no stringent requirements have to beimposed on the groove depth of the substrate alignment marks.

In practice, the overlay-measuring method of the present invention willbe applied as one step in a process of manufacturing a device in atleast one layer of substrates, namely for regularly checking theperformance of, inter alia, the alignment device. After the overlay hasbeen measured and, if needed, correction of, inter alia, the alignmentdevice has been carried out one substrate of a batch, a mask pattern isimaged in a resist layer on the other substrates of the batch. Afterthis image has been developed, material is removed from, or added to,areas of said substrate layer, which areas are delineated by the printedimage. These process steps of imaging and material removing or materialadding are repeated for all layers until the whole device is finished,wherein more overlay-measuring steps may be carried out.

The invention has been described with reference to its use with anapparatus for imaging a mask pattern on a substrate for manufacturingICs, but this does not mean that it is limited thereto. The inventionmay also be used with an apparatus for manufacturing integrated, orplanar, optical systems, magnetic heads or liquid crystal panels. Theprojection apparatus may not only be an optical apparatus, in which theprojection beam is a beam of electromagnetic radiation and theprojection system is an optical lens or mirror system, but also in anapparatus wherein the projection beam is a charged-particle beam, suchas an electron beam or an ion beam, or an X-ray beam, in which theassociated projection system, for example an electron lens system, isused. Generally, the invention may be used in imaging systems with whichimages having very small details must be formed.

1. A method of measuring, in a lithographic projection apparatus havingan alignment-measuring device, the overly between a resist layer, inwhich a mask pattern is to be imaged, and a substrate, having at leastone substrate overlay mark having a periodic structure with a firstperiod and a corresponding resist overlay mark having a periodicstructure with a second period, wherein measuring the overlay comprisesmeasuring an interference pattern with the alignment-measuring device ofthe lithographic projection apparatus, the alignment-measuring deviceconfigured to measure the alignment of a substrate alignment mark havinga periodic structure with a third period, with respect to a referencemark having a periodic structure with a fourth period, the interferencepattern having a fifth period being generated by illuminating thesubstrate overlay mark and the resist overlay mark, where the thirdperiod is larger than the first and second periods.
 2. A method asclaimed in claim 1, further comprising using a substrate reference markhaving substantially the same period as the interference pattern,imaging the substrate reference mark on the reference mark, anddetermining the difference between the positions of the image of theinterference pattern and that of the substrate reference mark withrespect to the reference mark.
 3. A method as claimed in claim 1,further comprising using gratings for the substrate overly mark, and theresist overlay mark and the reference mark.
 4. A method as claimed inclaim 1, wherein the resist overlay mark is a latent mark.
 5. A methodas claimed in claim 1, wherein the alignment-measuring device is anon-axis alignment-measuring device, and the reference mark is a maskalignment mark.
 6. A method as claimed in claim 5, wherein theinterference pattern is imaged on a mask alignment mark via an opticalfilter, which selects diffraction orders of the radiation from theoverlay marks to proceed to said mask alignment mark.
 7. A method asclaimed in claim 1, wherein the alignment-measuring device is anoff-axis alignment-measuring device.
 8. A method of manufacturing adevice in at least one layer of a substrate comprising: aligning, by analignment measuring apparatus with an exposure system, a mask providedwith at least one overlay mark with respect to the substrate; imaging,by projection radiation, the overlay mark of the mask, in a resist layeron the substrate, to form an overlay mark in the resist layer;determining an overlay error between the overlay mark formed in theresist layer and an overlay mark in the substrate, and adjusting theexposure system to correct the overlay error; imaging, by projectionradiation, a mask pattern comprising pattern features corresponding todevice features to be configured in said at least one layer in theresist layer on the substrate wherein the device features are to beformed, and removing material from, or adding material to, areas of saidat least one layer, which areas are delineated by the mask patternimage; wherein determining the overlay comprises measuring aninterference pattern with the alignment-measuring apparatus of theexposure system, the alignment-measuring apparatus configured to measurethe alignment of a substrate alignment mark having a periodic structurewith a first period, with respect to a reference mark having a periodicstructure with a second period, the interference pattern being generatedby illuminating the substrate overlay mark having a periodic structurewith a third period and the resist overlay mark having a periodicstructure with a fourth period, where the first period p, is larger thanthe third and fourth periods.
 9. The method of claim 8, wherein theexposure system is a stepping apparatus.
 10. The method of claim 8,wherein the exposure system is a step-and-scan apparatus.
 11. The methodof claim 8, wherein the substrate overlay mark, the resist overlay mark,and the reference mark each comprise gratings.
 12. The method of claim11, wherein the substrate alignment mark comprises a grating.
 13. Themethod of claim 8, wherein the alignment-measuring apparatus is anon-axis device, the reference mark is a mask alignment mark, and theinterference pattern is imaged on the mask alignment mark via an opticalfilter, which selects diffraction orders of the radiation from theoverlay marks to proceed to the mask alignment mark.
 14. The method ofclaim 13, wherein the resist overlay mark is a latent mark.